Measurement and tuning of the chromatic dispersion of a silicon photonic wire around the half band gap spectral region

We demonstrate the measurement and tuning of second-to-fourth order dispersion of a silicon wire waveguide in a spectral region of low nonlinear losses. Using white light interferometry we extract the chromatic dispersion of our waveguide from 1950 to 2300 nm. Moreover we demonstrate tuning of the zero dispersion wavelength over more than 100 nm, pushing it to longer wavelength by partially underetching the waveguide. © 2014 Optical Society of America.info:eu-repo/semantics/publishe

Telecom to mid-infrared spanning supercontinuum generation in hydrogenated amorphous silicon waveguides using a Thulium doped fiber laser pump source

A 1000 nm wide supercontinuum, spanning from 1470 nm in the telecom band to 2470 nm in the mid-infrared is demonstrated in a 800 nm x 220 nm 1 cm long hydrogenated amorphous silicon strip waveguide. The pump source was a picosecond Thulium doped fiber laser centered at 1950 nm. The real part of the nonlinear parameter of this waveguide at 1950 nm is measured to be 100±10 W -1m-1, while the imaginary part of the nonlinear parameter is measured to be 1.2±0.2 W-1m-1. The supercontinuum is stable over a period of at least several hours, as the hydrogenated amorphous silicon waveguides do not degrade when exposed to the high power picosecond pulse train. ©2013 Optical Society of America. © 2013 Optical Society of America.info:eu-repo/semantics/publishe

Mid-infrared to telecom-band stable supercontinuum generation in hydrogenated amorphous silicon waveguides

We demonstrate the generation of a stable supercontinuum in a 1-cm-long hydrogenated amorphous silicon waveguide by pumping the wire with 1950 nm picosecond pulses in the anomalous dispersion regime. The supercontinuum extends from 1460 to 2485 nm for a coupled peak power of 28.1 W

III-V-on-silicon photonic integrated circuits for communication and sensing applications

We review the integration of III-V semiconductors on silicon photonic integrated circuits as a way of realizing fully integrated silicon photonic transceivers and short-wave infrared spectroscopic sensors

Nonlinear properties of dispersion engineered InGaP photonic wire waveguides in the telecommunication wavelength range

We propose high index contrast InGaP photonic wires as a platform for the integration of nonlinear optical functions in the telecom wavelength window. We characterize the linear and nonlinear properties of these waveguide structures. Waveguides with a linear loss of 12 dB/cm and which are coupled to a single mode fiber through gratings with a -7.5 dB coupling loss are realized. From four wave mixing experiments, we extract the real part of the nonlinear parameter γ to be 475 ± 50 W-1m-1 and from nonlinear transmission measurements we infer the absence of two-photon absorption and measure a three-photon absorption coefficient of (2.5 ± 0.5) × 10-2 cm3GW-2.SCOPUS: ar.jinfo:eu-repo/semantics/publishe

Frequency comb generation in III-V-on-silicon photonic integrated circuits

We present our recent work on the realization of III-V-on-silicon mode-locked lasers and integrated nonlinear waveguides for the realization of integrated frequency combs

Nonlinear optical interactions in silicon waveguides

The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator

Mid-IR heterogeneous silicon photonics

In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources and optical parametric oscillators that can be used as spectroscopic sensor sources

III-V-on-silicon photonic devices for optical communication and sensing

In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm